METHOD AND STRUCTURE FOR FORMING SELF-ALIGNED, DUA

专利名称：METHOD AND STRUCTURE FOR FORMING

SELF-ALIGNED, DUAL STRESS LINER FORCMOS DEVICES

发明人：Huilong Zhu,Huicai Zhong,Effendi

Leobandung

申请号：US10906669申请日：20050301

公开号：US20060199326A1公开日：20060907

专利附图：

摘要：A method for forming a self-aligned, dual stress liner for a CMOS device

includes forming a first type stress layer over a first polarity type device and a secondpolarity type device, and forming a sacrificial layer over the first type nitride layer.Portions of the first type stress layer and the sacrificial layer over the second polaritytype device are patterned and removed. A second type stress layer is formed over thesecond polarity type device, and over remaining portions of the sacrificial layer over thefirst polarity type device in a manner such that the second type stress layer is formed at agreater thickness over horizontal surfaces than over sidewall surfaces. Portions of thesecond type stress liner on sidewall surfaces are removed, and portions of the secondtype stress liner over the

申请人：Huilong Zhu,Huicai Zhong,Effendi Leobandung

地址：Poughkeepsie NY 12603 US,Wappingers Falls NY 12590 US,Wappingers Falls NY12590 US

国籍：US,US,US

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