LM733资料

LM733󰁋LM733CDifferentialAmplifierAugust1989

LM733󰁋LM733CDifferentialAmplifier

GeneralDescription

TheLM733󰁋LM733Cisatwo-stage󰀷differentialinput󰀷differ-entialoutput󰀷wide-bandvideoamplifier󰀟Theuseofinternalseries-shuntfeedbackgiveswidebandwidthwithlowphasedistortionandhighgainstability󰀟Emitter-followeroutputsprovideahighcurrentdrive󰀷lowimpedancecapability󰀟Its120MHzbandwidthandselectablegainsof10󰀷100and400󰀷withoutneedforfrequencycompensation󰀷makeitaveryusefulcircuitformemoryelementdrivers󰀷pulseamplifi-ers󰀷andwidebandlineargainstages󰀟

TheLM733isspecifiedforoperationovertheb55󰀂Ctoa125󰀂Cmilitarytemperaturerange󰀟TheLM733Cisspeci-fiedforoperationoverthe0󰀂Ctoa70󰀂Ctemperaturerange󰀟

Features

YYYYY

120MHzbandwidth250kXinputresistance

Selectablegainsof10󰀷100󰀷400Nofrequencycompensation

Highcommonmoderejectionratioathighfrequencies

Applications

YYYYY

MagnetictapesystemsDiskfilememories

Thinandthickfilmmemories

WovenandplatedwirememoriesWidebandvideoamplifiers

ConnectionDiagrams

Dual-In-LinePackage

MetalCanPackage

TL󰁋H󰁋7866–2

Note󰀌Pin5connectedtocase󰀟

TopView

OrderNumberLM733HorLM733CHSeeNSPackageNumberH10D

TL󰁋H󰁋7866–1

TopView

OrderNumberLM733CNSeeNSPackageNumberN14A

C1995NationalSemiconductorCorporationTL󰁋H󰁋7866RRD-B30M115󰁋PrintedinU󰀟S󰀟A󰀟

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AbsoluteMaximumRatings

IfMilitary󰁋Aerospacespecifieddevicesarerequired󰀷pleasecontacttheNationalSemiconductorSalesOffice󰁋Distributorsforavailabilityandspecifications󰀟

g5VDiffentialInputVoltageCommonModeInputVoltage

VCC

OutputCurrent

g6Vg8V

PowerDissipation(Note1)JunctionTemperatureStorageTemperatureRangeOperatingTemperatureRangeLM733LM733C

LeadTemperature(Soldering󰀷10sec󰀟)

500mW

a150󰀂C

b65󰀂Ctoa150󰀂Cb55󰀂Ctoa125󰀂C

0󰀂Ctoa70󰀂C

10mA260󰀂C

ElectricalCharacteristics(TAe25󰀂C󰀷unlessotherwisespecified󰀷seetestcircuits󰀷VSeg6󰀟0V)

Characteristics

DifferentialVoltageGainGain1(Note2)Gain2(Note3)Gain3(Note4)BandwidthGain1Gain2Gain3RiseTimeGain1Gain2Gain3

PropagationDelayGain1Gain2Gain3InputResistanceGain1Gain2Gain3

InputCapacitanceInputOffsetCurrentInputBiasCurrentInputNoiseVoltageInputVoltageRange

CommonModeRejectionRatioGain2Gain2

SupplyVoltageRejectionRatioGain2

OutputOffsetVoltageGain1

Gain2and3

OutputCommonModeVoltageOutputVoltageSwingOutputSinkCurrentOutputResistancePowerSupplyCurrent

1

RLe%

11

VCMeg1Vfs100kHzVCMeg1Vfe5MHzDVSeg0󰀟5VRLe%RLe%RLe2k

2󰀟43󰀟02󰀟5

BWe1kHzto10MHz

g1󰀟0

TestCircuit

TestConditions

Min300909󰀟0

LM733Typ400100104090120

Max50011011

Min250808󰀟0

LM733CTyp40010010409012010󰀟54󰀟52󰀟57󰀟56󰀟03󰀟64󰀟0302502󰀟0

3󰀟020

0󰀟49󰀟012

g1󰀟0

Units

Max60012012

MHzMHzMHznsnsnsnsnsnskXkXkXpF

5󰀟030

mAmAmVrmsV

1

RLe2kXVOUTe3Vp-p

2

VOUTe1Vp-p

2

VOUTe1Vp-p

2

10󰀟54󰀟52󰀟57󰀟56󰀟03󰀟64󰀟0302502󰀟00󰀟49󰀟012

1012

1010

20

Gain2

10

60

8660700󰀟60󰀟352󰀟94󰀟03󰀟62018

241󰀟51󰀟03󰀟4

60

8660700󰀟60󰀟35

1󰀟51󰀟53󰀟4

dBdBdBVVV

1111

5050

2󰀟43󰀟02󰀟5

2󰀟94󰀟03󰀟62018

mAX

24

mA

2

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ElectricalCharacteristics(Continued)

(Thefollowingspecificationsapplyforb55󰀂CkTAk125󰀂CfortheLM733and0󰀂CkTAk70󰀂CfortheLM733C󰀷VSeg6󰀟0V)

Characteristics

DifferentialVoltageGainGain1Gain2Gain3

InputResistanceGain2InputOffsetCurrentInputBiasCurrentInputVoltageRange

CommonModeRejectionRatioGain2SupplyVoltageRejectionRatioGain2

OutputOffsetVoltageGain1

Gain2and3OutputVoltageSwingOutputSinkCurrentPowerSupplyCurrent

1

RLe%

11111

VCMeg1Vfs100kHzDVSeg0󰀟5VRLe%RLe2k

2󰀟52󰀟2

27

g1

TestCircuit

TestConditions

LM733Min200808󰀟08

540

g1

LM733C

Max60012012󰀟0

Min250808󰀟08

640

Typ

Max60012012󰀟0

Typ

Units

1

RLe2kX󰀷VOUTe3Vp-p

kXmAmAVdBdB

1󰀟51󰀟5

VVVppmA

27

mA

5050

1󰀟51󰀟2

5050

2󰀟82󰀟5

Note1󰀌ThemaximumjunctiontemperatureoftheLM733is150󰀂C󰀷whilethatoftheLM733Cis100󰀂C󰀟ForoperationatelevatedtemperaturesdevicesintheTO-100packagemustbederatedbasedonathermalresistanceof150󰀂C󰁋Wjunctiontoambientor45󰀂C󰁋Wjunctiontocase󰀟Thermalresistanceofthedual-in-linepackageis90󰀂C󰁋W󰀟

Note2󰀌PinsG1AandG1Bconnectedtogether󰀟Note3󰀌PinsG2AandG2Bconnectedtogether󰀟Note4󰀌Gainselectpinsopen󰀟

Note5󰀌RefertoRETS733XdrawingforspecificationsofLM733Hversion󰀟

TypicalPerformanceCharacteristics

PulseResponse

PulseResponsevsTemperature

PulseResponsevsSupplyVoltage

PhaseShiftvsFrequencyPhaseShiftvsFrequencyDifferentialOverdriveRecoveryTime

TL󰁋H󰁋7866–6

3

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TypicalPerformanceCharacteristics(Continued)

GainvsFrequencyTemperature

GainvsFrequencyvsSupplyVoltage

VoltageGainvsFrequency

VoltageGainvsRADJ

VoltageGainvsTemperature

VoltageGainvsSupplyVoltage

OutputVoltageSwingvsFrequency

SupplyCurrent󰀷OutputVoltageandCurrentSwingvsSupplyVoltage

OutputVoltageSwingvsLoadResistance

CommonModeRejectionRatiovsFrequencyInputNoiseVoltagevsSourceResistanceSupplyCurrentandInputResistancevsTemperature

TL󰁋H󰁋7866–7

4

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TestCircuits

TestCircuit1

TestCircuit2

TL󰁋H󰁋7866–3TL󰁋H󰁋7866–4

VoltageGainAdjustCircuit

TL󰁋H󰁋7866–5

VSe6V󰀷TAe25󰀂C

(PinnumbersapplytoTO-5package)

SchematicDiagram

TL󰁋H󰁋7866–8

5

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LM733󰁋LM733CDifferentialAmplifierPhysicalDimensionsinches(millimeters)

MetalCanPackage(H)

OrderNumberLM733HorLM733CH

NSPackageNumberH10D

MoldedDual-In-LinePackage(N)

OrderNumberLM733CNNSPackageNumberN14A

LIFESUPPORTPOLICY

NATIONAL’SPRODUCTSARENOTAUTHORIZEDFORUSEASCRITICALCOMPONENTSINLIFESUPPORTDEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFTHEPRESIDENTOFNATIONALSEMICONDUCTORCORPORATION󰀟Asusedherein󰀌1󰀟Lifesupportdevicesorsystemsaredevicesorsystemswhich󰀷(a)areintendedforsurgicalimplantintothebody󰀷or(b)supportorsustainlife󰀷andwhosefailuretoperform󰀷whenproperlyusedinaccordancewithinstructionsforuseprovidedinthelabeling󰀷canbereasonablyexpectedtoresultinasignificantinjurytotheuser󰀟

NationalSemiconductorCorporation1111WestBardinRoad2󰀟Acriticalcomponentisanycomponentofalifesupportdeviceorsystemwhosefailuretoperformcanbereasonablyexpectedtocausethefailureofthelifesupportdeviceorsystem󰀷ortoaffectitssafetyoreffectiveness󰀟

NationalSemiconductorEuropeFax󰀌(a49)0-180-5308586NationalSemiconductorHongKongLtd󰀟13thFloor󰀷StraightBlock󰀷NationalSemiconductorJapanLtd󰀟Tel󰀌81-043-299-2309